| PART |
Description |
Maker |
| CAT28C16AKI-20 CAT25C03U-1.8 CAT25040YI-GT3 CAT24W |
EEPROM (256x8) 2K 1.8-6.0
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (2048x8) 16K
EEPROM (256x8) 2K 2.5-6.0
EEPROM 64K X 8 512K 5V
EEPROM (256x8) (128x16) 2K
EEPROM (8kx8) 64K 3V
EEPROM (512x8) (256x16) 4K
EEPROM (2048x8)(1024x16)16K
EEPROM (128x8) 1k 1.8-6.0
EEPROM (8kx8) 64K 1.8-6.0
EEPROM 16K-Bit CMOS PARA EEPROM
EEPROM (512x8) 4k 2.5-6.0
EEPROM (4096x8) 32k 1.8-6.0
EEPROM (384x8) 128k 16
EEPROM (2Kx8) 16K 5V 90ns
|
Electronic Theatre Controls, Inc.
ON Semiconductor
Qualtek Electronics, Corp.
Lumex, Inc.
Vicor, Corp.
EPCOS AG
NXP Semiconductors N.V.
Atmel, Corp.
Linear Technology, Corp.
Amphenol, Corp.
Bourns, Inc.
TE Connectivity, Ltd.
Integrated Silicon Solution, Inc.
Anpec Electronics, Corp.
|
| AS7C31024A-10JI AS7C31024A-10STC AS7C31024A-10STI |
4-Bit Synchronous Binary Counters 16-VQFN -40 to 85
4-Bit Synchronous Binary Counters 16-TSSOP -40 to 85
128 x 64 pixel format, LED or EL Backlight available
8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Pin Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, UL
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
Replaced by SN74LV164A : 8-Bit Parallel-Out Serial Shift Register 14-SOIC -40 to 85 128K X 8 STANDARD SRAM, 20 ns, PDSO32
RES, SMD, 4.22K OHM, 1%, 1/10W, RMF
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Overtravel Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, U
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
From old datasheet system
301K 1% 100PPM TF
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
|
| W2465S |
LOW POWER & NORMAL SRAM 8KX8
|
Winbond Electronics
|
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HS-6664RH HS9-6664RH-Q HS1-6664RH-Q HS9-6664RH-8 H |
Radiation Hardened 8kx8 CMOS PROM
|
Intersil Corporation
|
| 5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 59 |
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder.
Radiation-Hardened 8Kx8 SRAM: SMD. Total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
|
Aeroflex Circuit Technology
|
| UT62L12916 UT62L12916BS UT62L12916BS-100L UT62L129 |
128K X 16 BIT LOW POWER CMOS SRAM 128K的16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
UTRON Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| BS616UV2019AI85 BS616UV2019TI85 |
Ultra Low Power CMOS SRAM 128K X 16 bit 超低功耗CMOS SRAM 128K的16
|
BRILLIANCE SEMICONDUCTOR, Inc.
|
|
